|
|
Development on SiOx(X≤2)-Based Electroluminescence System |
|
|
Abstract: SiOx(X≤2)-based electroluminescence material has rapidly developed recently, thus it is necessary to review practical Si-based light emitting devices consisting of ion-doped SiOx, Si-nanocrystal implanted SiO2, porous silicon, hydrogen amorphous Si(C) and MOS structures in this paper. On the basis of these, electroluminescent mechanism has been discussed and at the same time some problems such as low quantum efficiency and poor stability have been clarified that carrier balance injection is must, in the electroluminescent system with impaction of excitons and recombination of carrier, to improve quantum efficiency. Finally development on SiOx(X≤2)-based LED are suggested.
|
Received: 20 March 2009
|
|
|
|
[1] |
HE Ning;LI Qinglun;QI Yang;ZHANG Caibei. Impact of Lanthanide Contraction on the Structure and Electric Transport Properties of the Nano Powder by Doping with (La0.8Ln0.2)2/3Ca1/3MnO3[J]. , 2013, 31(9): 18-22. |
[2] |
DU Jianzhou;QIU Jinhao;ZHU Kongjun;JI Hongli. Preparation of 0.55PNN-0.45PZT Piezoelectric Ceramics by and Doped with Fe2O3 Using Microwave Sintering and Its Properties[J]. , 2013, 31(5-6): 29-32. |
[3] |
. Effects of Various Dopant on Photoluminescence of GaN Based Materials[J]. , 2011, 29(11-09): 76-79. |
[4] |
. Purification of Liquid Phase Silicon Dioxide from Reclaiming Tail Gas of Solar Polysilicon Production[J]. , 2010, 28(23): 104-107. |
[5] |
. Effect of Doped-CeO2 on the Structure and the Ultra-Violet Absorption Property of ZnO Thin Film[J]. , 2010, 28(21): 26-29. |
[6] |
. Research Progress on Small Molecular Materials for Organic Light-emitting Diodes[J]. , 2010, 28(17): 100-111. |
|
|
|
|