%A CHANG Chunrui, ZHAO Hongwei, DIAO Jiajia, AN Libao %T Application research of carbon nanotube-based field-effect transistors:A review %0 Journal Article %D 2016 %J Science & Technology Review %R 10.3981/j.issn.1000-7857.2016.23.011 %P 106-114 %V 34 %N 23 %U {http://www.kjdb.org/CN/abstract/article_14039.shtml} %8 2016-12-13 %X Due to the scaling challenge faced by silicon transistors, carbon nanotube (CNTs), being one-dimensional quantum material, becomes a candidate for future transistors. Carbon nanotube field effect transistors (CNTFETs) can be realized in several geometrical configurations. This paper begins with a survey of typical CNTFET device geometries, the associated basic operating principles, and the unique properties. Then, it focuses on the recent development of several common CNTFETs, and describes in detail a series of technical innovations and performance improvements in terms of. structural and operating principles. Finally, some key problems about CNTFETs to be solved in future are summarized.