Abstract:Optical titanium dioxide film is deposited with the ion beam assistant twin magnetron MF reactive sputtering equipment. The variation of reactive plasma is monitored by Langmuir probe and the I-V curve is also tested simultaneously. The results demonstrate that the assistant ion beam plays an important role in enhancement of electrical charge density in the plasma region. With the increase of ion beam power assistance, the electron density increases and both minus floating potential and reactive sputtering voltage decrease. The plus potential on the surface of the substrate increases during the variation from electron-rich to ion-rich state. The substrate steps into the plasma electric neutrality state when the ion beam assistance power supply is 109 W.
[1] 徐万劲. 磁控溅射技术进展及应用[J]. 现代仪器, 2005(5):1-5.
[2] Bunshah R F. Handbook of deposition technologies for films and coatings[M]. New Jersey:Noyes Press, 1994:11-15.
[3] Vossen J L, Kern W. Thin film processes Ⅱ[M]. New York:Academic Press, 1991:115-118.
[4] Howson R P, Danson N, Safi I. Rate reactive sputtering using gas pulsing:A technique for creation of films onto large flat substrate[J]. Thin Solid Films, 1999, 351:32-36.
[5] Martin N, Bally A R, Hones P, et al. High rate and process control of reactive sputtering by gas pulsing:The TiO system[J]. Thin Solid Films, 2000(377-378):550-556.
[6] Safi I, Howson R P, Danson N. Recent aspects concerning DC reactive magnetron sputtering of thin films:A review[J]. Surface and Coatings Technology, 1998, 127(2-3):103-128.
[7] Ruzic D N. Electric probes for low temperature plasma[M]. New York:Academic Press, 1994:125-128.
[8] 邓新绿. 等离子体实验与诊断研究生课程讲义[M]. 大连:大连理工大学出版社, 2001:12-18.
[9] Kim S H, Hwangbo C K. Influence of Ar ion-beam assistance and annealing temperatures on properties of TiO2 thin films deposited by reactive DC magnetron sputtering[J]. Thin Solid Films, 2005(475):155-159.