专题论文

微波烧结法制备Fe2O3掺杂0.55PNN-0.45PZT压电陶瓷及性能

  • 杜建周;裘进浩;朱孔军;季宏丽
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  • 南京航空航天大学机械结构力学及控制国家重点实验室,南京 210016

收稿日期: 2012-12-20

  修回日期: 2013-01-16

  网络出版日期: 2013-02-28

Preparation of 0.55PNN-0.45PZT Piezoelectric Ceramics by and Doped with Fe2O3 Using Microwave Sintering and Its Properties

  • DU Jianzhou;QIU Jinhao;ZHU Kongjun;JI Hongli
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  • State Key Laboratory of Mechanics and Control of Mechanical Structures, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China

Received date: 2012-12-20

  Revised date: 2013-01-16

  Online published: 2013-02-28

摘要

微波烧结是一种新型、高效的陶瓷烧结工艺,具有升温速度快、节能省时、改善微观结构以及降低烧结温度等特点.本文采用微波烧结工艺制备了Fe2O3掺杂的0.55Pb(Ni1/3Nb2/3)O3-0.45Pb(Zr0.3Ti0.7)O3(简写为0.55PNN-0.45PZT)压电陶瓷,烧结温度为1200℃、保温时间为2h.利用X射线衍射(X-ray Diffraction,XRD)、扫描电子显微镜(Scanning Electron Microscope, SEM)、阻抗分析仪及铁电分析仪等测试表征方法,研究了Fe2O3掺杂对陶瓷的结构、介电以及压电性能的影响.结果表明,所有陶瓷样品均为钙钛矿结构,随着Fe2O3掺杂量的增加,压电和介电性能呈先增加后减小趋势.当Fe2O3掺杂量为0.8%(质量分数)时,陶瓷达到最优电学性能:压电常数(d33)、平面机电耦合系数(kp)、相对介电常数(εr)和介电损耗(tanδ)分别为d33=520pC/N,kp=0.51,εr=4768,tanδ=0.026.

本文引用格式

杜建周;裘进浩;朱孔军;季宏丽 . 微波烧结法制备Fe2O3掺杂0.55PNN-0.45PZT压电陶瓷及性能[J]. 科技导报, 2013 , 31(5-6) : 29 -32 . DOI: 10.3981/j.issn.1000-7857.2013.h1.004

Abstract

Microwave sintering is a novel and high efficiency sintering technology for ceramics, which exhibits many significant advantages, such as high rapid heating rate, energy saving and shorter sintering time, microstructures improvement, and lower sintering temperature. The 0.55Pb(Ni1/3Nb2/3)O3-0.45Pb(Zr0.3Ti0.7)O3(0.55PNN-0.45PZT) piezoelectric ceramics by doping with Fe2O3 were prepared using the microwave sintering process at 1,200℃ for 2h. The effect of Fe2O3 doping on microstructure, dielectric and piezoelectric properties were investigated by using X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM), impedance analyser, and ferroelectric tester in detail. The XRD results indicate that all samples possess typical pervoskite phase. In addition, both the piezoelectric and dielectric constants increases firstly and then decreases with increasing x. The optimum electrical properties of d33=520pC/N, kp=0.51, εr=4768, and tanδ=0.026 are obtained for the 0.55PNN-0.45PZT ceramics by doping with 0.8% Fe2O3.
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