研究论文

全化学溶液法制备SrTiO3缓冲层

  • 罗清威
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  • 陕西理工学院材料科学与工程学院, 汉中 723000
罗清威,讲师,研究方向为高温超导材料,电子信箱:xianghunnv@126.com

收稿日期: 2014-04-29

  修回日期: 2014-06-24

  网络出版日期: 2014-09-16

基金资助

陕西理工学院人才引进项目(SLGQD13(2)-16);汉中市科技攻关项目(2013hzzx-53)

Preparation of SrTiO3 Buffer Layer by Chemical Solution Deposition

  • LUO Qingwei
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  • College of Material Science and Engineering, Shaanxi University of Technology, Hanzhong 723000, China

Received date: 2014-04-29

  Revised date: 2014-06-24

  Online published: 2014-09-16

摘要

化学法制备SrTiO3薄膜成本低、效率高,适合用于YBa2Cu3O7-δ(YBCO)涂层导体的缓冲层。采用全化学溶液沉积法在Ni-5W金属基带上外延生长了SrTiO3(STO)缓冲层薄膜。以乙酸盐、钛酸丁酯为原料配制均匀稳定的STO种子层、LaxSr1-xTiO3种子层和STO 缓冲层前驱溶液。研究了STO 种子层薄膜厚度对在STO/Ni-5W(200)上沉积STO 外延薄膜性能的影响,结果表明,在880℃烧结温度下制备的3 层STO 种子层上可以制备出表面光滑平整、具有(200)择优取向的STO 缓冲层。尝试将La 元素掺入STO 中制得稳定的LSTO 前驱液,在LSTO/Ni-5W 结构上制备了具有(200)择优取向的STO 缓冲层薄膜,可作为YBa2Cu3O7-δ涂层导体的缓冲层。

本文引用格式

罗清威 . 全化学溶液法制备SrTiO3缓冲层[J]. 科技导报, 2014 , 32(25) : 32 -35 . DOI: 10.3981/j.issn.1000-7857.2014.25.004

Abstract

The SrTiO3 films prepared by chemical method possess features of low-cost and efficiency, and they are a promising buffer layer for YBCO coated conductors. STO buffer layers were prepared on Ni-5W substrate by chemical solution deposition. Acetate and tetrabutyl titanate were used as precursors to synthesize the precursor solutions of STO seed layers, LaxSr1-xTiO3 seed layers and STO buffer layers. Effect of the thickness of STO seed layers on the properties of SrTiO3 epitaxial films prepared on STO/Ni-5W(200) structures was studied. The results showed that three multilayer STO seed layers were sintered at 880℃ which was favorable to fabricate (200)-oriented STO films with smooth surface. When La was added into STO, stabilized LSTO precusor solution could be obtained, and highly (200)-oriented STO buffer films were prepared on LSTO/Ni-5W structures. They can be a promising buffer layer for YBa2Cu3O7-δ coated conductors.

参考文献

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