本文从半导体科学技术研究与诺贝尔物理学奖的渊源出发,详细解读了2014 年诺贝尔物理学奖成果"高效GaN 基蓝光发光二极管"的研究背景、核心创新内容、科学意义和应用价值,分析了氮化物宽禁带半导体的发展趋势。文章从3 位诺贝尔物理学奖获得者的研究历程、诺贝尔评奖委员会的评奖标准等视角,探讨了2014 年的诺贝尔物理学奖对我国物理学科建设、如何看待应用物理研究与基础物理研究的关系以及对成果评价标准的启示和借鉴价值等问题。
This article explains in details about the background, content, academic significance and contribution to the social development of the invention of GaN-based blue light emission diode (LED), which was awarded the 2014 Nobel Prize in Physics. It also analyzes the development trend of the nitride wide bandgap semiconductors. Based on the story of assiduous research work of the three Nobel prize winners, and the evaluation standard of the Nobel prize committee, the article makes comments on the positive experiences from this awarding to our country, in terms of the construction way of physical science, the relationship between fundamental and applied physics, and the standard of evaluating the research achievements.
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