研究论文

抗过载片上集成MEMS悬浮螺旋电感

  • 李建华 ,
  • 卢冲赢 ,
  • 徐立新 ,
  • 武浩
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  • 1. 北京理工大学机电动态控制重点实验室, 北京 100081;
    2. 淮海工业集团有限公司, 长治 046012
李建华,博士后,研究方向为微机电技术,电子信箱:jh.li@gmail.com

收稿日期: 2014-09-24

  修回日期: 2014-11-24

  网络出版日期: 2015-03-27

Anti-overloading on-chip integrated MEMS suspended spiral inductor

  • LI Jianhua ,
  • LU Chongying ,
  • XU Lixin ,
  • WU Hao
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  • 1. National Key Laboratory of Science and Technology on Electromechanical Dynamic Control, Beijing Institute of Technology, Beijing 100081, China;
    2. Huaihai Industries Group Co. Ltd., Changzhi 046012, China

Received date: 2014-09-24

  Revised date: 2014-11-24

  Online published: 2015-03-27

摘要

针对微机电系统(MEMS)悬浮电感机械性能较差问题,设计了一种应用于高过载环境的片上集成MEMS 悬浮螺旋电感。通过采用一种新颖的阶梯式螺旋线圈结构,有效减小了悬浮线圈在高过载环境中的变形与应力。利用ANSYS 和HFSS 软件对设计的电感力学性能和射频性能进行联合仿真。仿真结果表明,采用阶梯式螺旋线圈的MEMS 悬浮电感的抗过载能力比采用等截面线圈的传统MEMS 悬浮电感提高了近3 倍,并且具有相当的射频性能;与增加了支撑柱的等截面MEMS 悬浮电感相比,所设计的MEMS 悬浮电感具有与之相当的力学性能,但是其射频性能明显优于增加了支撑柱的电感。

本文引用格式

李建华 , 卢冲赢 , 徐立新 , 武浩 . 抗过载片上集成MEMS悬浮螺旋电感[J]. 科技导报, 2015 , 33(5) : 57 -61 . DOI: 10.3981/j.issn.1000-7857.2015.05.008

Abstract

For the presence of the suspended spiral coil, the MEMS suspended inductor has unsatisfactory mechanical performance, and use of the inductor in shock environments is restricted. Aimed at this problem, this paper designed an on-chip integrated MEMS suspended spiral inductor with a novel step-shaped spiral coil. A simple cantilever beam was used to explain the design principle, and the radio frequency performance was considered together with the mechanical performance in the design to ensure the high-Q characteristic, which is the main and inherent advantage of the MEMS suspended inductor. The fabrication process of the inductor is briefly introduced. ANSYS and HFSS were used to study the mechanical performance and the radio performance of the inductor, respectively. To compare with simulation results of the introduced inductor (denoted by ‘Inductor- A’), a conventional MEMS suspended inductor with an equal cross-section area spiral coil (denoted by ‘Indcutor-B’) and a conventional MEMS suspended inductor with an additional support pillar (denoted by ‘Inductor-C’) were also analyzed by using ANSYS and HFSS at the same time. The results show that the anti-overload capacity of Inductor-A was improved by about three times that of the Inductor-B, while radio frequency performances of both inductors were almost the same, and accordingly, the quality factor of Inductor-A was much higher than that of Inductor-C, while mechanical performances of both inductors were almost the same. The results indicate that the inductor presented in this paper has excellent radio frequency performance and mechanical performance.

参考文献

[1] Zeng J, Wang C H, Sangster A J. Theoretical and experimental studies of flip-chip assembled high-Q suspended MEMS inductors[J]. IEEE Transaction on Microwave Theory and Techniques, 2007, 55(6): 1171-1181.
[2] Tai C M, Liao C N. Multilevel suspended thin-film inductors on silicon wafers[J]. IEEE Transactions on Electron devices, 2007, 54(6): 1510-1514.
[3] 赵小林, 王西宁, 周勇, 等. 双层悬空结构射频微电感制作研究[J]. 微纳 电子技术, 2005(1): 30-32. Zhao Xiaolin, Wang Xining, Zhou Yong, et al. Fabrication and performance of double layer suspended spiral inductor[J]. Micronanoelectronic Technology, 2005(1): 30-32.
[4] Yoon J B, Choi Y S, Kim B I, et al. CMOS-compatible surfacemicromachined suspended-spiral inductors for multi-GHz silicon RF ICs[J]. IEEE Electron Devices Letters, 2002, 23(10): 591-593.
[5] Yoon J B, Han C H, Yoon E, et al. Monolithic high-Q overhang inductors fabricated on silicon and glass substrates[C]//Prceedings of IEEE International Devices Meeting. Washington DC: IEEE, 1999: 753-756.
[6] 王西宁, 赵小林, 周勇, 等. 新型悬空结构射频微电感的制作与测试[J]. 电子元件与材料, 2004, 23(1): 54-56. Wang Xining, Zhao Xiaolin, Zhou Yong, et al. A new suspended RF micro-inductor: Fabrication and measurement[J]. Electronic Components & Materials, 2004, 23(1): 54-56.
[7] Huo X, Chen K J, Chan P C H. Silicon-based high-Q inductors incorporation electroplated copper and low-K BCB dielectric[J]. IEEE Electron Device Letters, 2002, 23(9): 520-522.
[8] Cheon S, Yoon M, Park H, et al. Robust and postless air-suspended high Q integrated inductors on silicon[J]. IEEE Transactions on Magnetics, 2012, 48(11): 4131-4134.
[9] Srikar V T, Senturia S D. The reliability of microelectromechanical systems (MEMS) in shock environments[J]. Journal of Microelectromechanical Systems, 2002, 11(3): 206-214.
[10] 丁勇, 刘泽文, 刘理天, 等. 硅微机械悬浮结构电感的设计与制作工 艺研究[J]. 电子学报, 2002, 30(11): 1598-1600. Ding Yong, Liu Zewen, Liu Litian, et al. Design and fabrication of silicon micromaching suspended inductor[J]. Acta Electronica Sinica, 2002, 30(11): 1598-1600.
[11] Yue C P, Wong S S. Physical modeling of spiral inductors on silicon[J]. IEEE Transactions on Electron Devices, 2000, 47(3): 560-568.
[12] Park J Y, Allen M G. Packaging-compatible high Q microinductors and microfilters for wireless applications[J]. IEEE Transactions on Advanced Packaging, 1999, 22(2): 207-213.
[13] Greenhouse H M. Design of planar rectangular microelectronic inductors[J]. IEEE Transcations on Parts, Hybrids, and Packaging, 1974, 10(2): 101-109.
[14] 卢冲赢, 徐立新, 李建华, 等. CMOS兼容高Q 值微机电系统悬浮偏上 螺旋电感[J]. 兵工学报, 2014, 35(5): 634-639. Lu Chongying, Xu Lixin, Li Jianhua, et al. CMOS-compatible high-Q micro-electro-mechanical system suspended on-chip spiral inductor[J]. Acta Armamentrii, 2014, 35(5): 634-639.
[15] Lin J W, Chen C C, Cheng Y T. A robust high-Q micromachined RF inductor for RFIC applications[J]. IEEE Transactions on Electron Devices, 2005, 52(7): 1489-1496.
[16] Dolbow J, Gosz M. Effect of out-of-plane properties of a polymide film on the stress fields in microelectronic structures[J]. Mechanics of Materials, 1996(23): 311-321.
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