由于GaN材料本身具有的极大优越性，如大禁带宽度、高临界场强、高热导率、高载流子饱和速率、高异质结界面二维电子气浓度等，决定了GaN基材料及其器件在发光半导体材料领域中的重要地位，而高质量GaN的掺杂制备一直是研究者关注的热点。本文根据近几年国内外对掺杂GaN基材料的研究成果，总结概括了IIA族、过渡族以及稀土族元素对GaN的掺杂，分析讨论了不同掺杂元素对GaN基材料发光性能的影响，并以Mg掺杂GaN为例，对比了各种掺杂技术的优缺点
Gallium Nitride (GaN)-based materials have great advantages, such as direct and large band-gap, high critical field strength and thermal conductivity, high carrier saturation velocity, and high mobility and concentration of two-dimensional electron gas at hetero-junction interface, the advantages determine that the GaN-based materials and devices play an important role in the area of light-emitting semiconductor materials. Thus, the preparation of high quality GaN-based materials doped with various elements has become one of interesting research topics. The recent advanced researches and developments are reviewed and it mainly focuses on doped GaN-based materials, including GaN doped with group IIA elements, the transition elements, and the rare-earth elements; and also the effects of different dopant on the growth and optical properties of GaN-based materials are analyzed. Moreover, the advantages and disadvantages of various doping technologies have been further compared by taking Mg-doped GaN as a typical example
