Progress in developing high-voltage SiC power devices

BAI Song; LI Shiyan; YANG Xiaolei; FEI Chenxi; LIU Ao; HUANG Runhua; YANG Yong

doi:10.3981/j.issn.1000-7857.2021.14.005

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Science & Technology Review ›› 2021, Vol. 39 ›› Issue (14) : 56-62. DOI: 10.3981/j.issn.1000-7857.2021.14.005

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Progress in developing high-voltage SiC power devices

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State Key Laboratory of Wide-Bandgap Semiconductor Electronic Devices, Nanjing Electronic Devices Institute, Nanjing 210016, China

Abstract

The SiC power devices are replacing the silicon-based devices in more and more applications, and becoming a research focus. The SiC device technologies have matured in recent years, and the advantages in performance over the Si device are demonstrated in this paper. The development of the high-voltage SiC power devices and some of the latest progresses are discussed.

Key words

SiC / power / MOSFET / IGBT

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BAI Song, LI Shiyan, YANG Xiaolei, FEI Chenxi, LIU Ao, HUANG Runhua, YANG Yong. Progress in developing high-voltage SiC power devices[J]. Science & Technology Review, 2021, 39(14): 56-62 https://doi.org/10.3981/j.issn.1000-7857.2021.14.005

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