Research progress on reliability of 4H-SiC power Schottky diodes

ZHANG Yuming; YUAN Hao; TANG Xiaoyan; SONG Qingwen; HE Yanjing; LI Dongxun; BAI Zhiqiang

doi:10.3981/j.issn.1000-7857.2021.14.006

ZHANG Yuming, YUAN Hao, TANG Xiaoyan, SONG Qingwen, HE Yanjing, LI Dongxun, BAI Zhiqiang

Science & Technology Review ›› 2021, Vol. 39 ›› Issue (14) : 63-68.

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Science & Technology Review ›› 2021, Vol. 39 ›› Issue (14) : 63-68. DOI: 10.3981/j.issn.1000-7857.2021.14.006

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Research progress on reliability of 4H-SiC power Schottky diodes

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2021, 39(14): 63-68 https://doi.org/10.3981/j.issn.1000-7857.2021.14.006

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