|
|
Development and trend of the third generation semiconductor industry |
WU Ling, ZHAO Lubing |
China Advanced Semiconductor Industry Innovation Alliance, Beijing 100083, China |
|
|
Abstract: The third generation semiconductor is in the frontier of the global semiconductor technology research and is the focus of the new industry competition. This paper reviews the development of the third generation semiconductor, China's scientific and technological support policies for the third generation semiconductor industry, and the current risks and existing problems. The exploration and the practice of the third-generation strategic alliance for the technological innovation in the semiconductor industry are discussed, including promoting the integration of the industry-university-research innovation consortium with major national projects, promoting the construction of the national public platform and industrial innovation ecology, formulating the group standards and promoting the construction of the related testing platforms, promoting the integration and the development of large, medium and small enterprises through innovative and entrepreneurial services, and the international cooperation. In view of the current international situation and the opportunities and challenges faced by China's third-generation semiconductor industry, this paper puts forward five suggestions:Starting the national 2030 major project as soon as possible, aiming at the major needs of the country and exploring a new national system; consolidating the basic platforms such as the public R&D and services that support the industrial chain; accelerating the improvement of the industrial ecological environment; implementing the application demonstration projects and bringing into full play the leading role of the demand side in the industry; constructing the network chain of the science and technology capital, and realizing the pulling function of the national credit on the R&D chain, the industrial chain and the capital chain.
|
Received: 11 May 2020
|
|
|
|
[1] 中共中央国务院印发《长江三角洲区域一体化发展规划纲要》[EB/OL]. (2019-12-01)[2020-02-04]. http://www.gov.cn/zhengce/2019-12/01/content_5457442.htm.
[2] 国务院关于印发新时期促进集成电路产业和软件产业高质量发展若干政策的通知(国发
[2020] 8号)[EB/OL]. (2020-08-04)[2021-01-06]. http://www.gov.cn/zhengce/content/2020-08/04/content_5532370.htm.
[3] 中华人民共和国国民经济和社会发展第十四个五年规划和2035年远景目标纲要[EB/OL]. (2021-03-13)[2021-03-25]. http://www.gov.cn/xinwen/2021-03/13/content_5592681.htm.
[4] 关于扩大战略性新兴产业投资培育壮大新增长点增长极的指导意见(发改高技
[2020] 1409号)[EB/OL]. (2020-09-08)[2021-03-20]. https://www.ndrc.gov.cn/xxgk/zcfb/tz/202009/t20200925_1239582_ext.html.
[5] 关于促进集成电路产业和软件产业高质量发展企业所得税政策的公告(财政部税务总局发展改革委工业和信息化部公告2020年第45号)[EB/OL]. (2020-12-11)[2021-03-05]. http://www.gov.cn/zhengce/zhengceku/2020-12/17/content_5570401.htm.
[6] 广东省人民政府办公厅关于印发广东省加快半导体及集成电路产业发展若干意见的通知(粤府办
[2020] 2号)[EB/OL]. (2021-02-03)[2021-03-20]. http://www.gd.gov.cn/zwgk/wjk/qbwj/yfb/content/post_2894098.html.
[7] 广东省科学技术厅广东省发展和改革委员会广东省工业和信息化厅广东省商务厅广东省市场监督管理局关于印发广东省培育前沿新材料战略性新兴产业集群行动计划(2021-2025年)的通知[EB/OL]. (2020-10-09)[2021-03-08]. http://www.gd.gov.cn/zwgk/jhgh/content/post_3097974.html. |
[1] |
BAI Song, LI Shiyan, YANG Xiaolei, FEI Chenxi, LIU Ao, HUANG Runhua, YANG Yong. Progress in developing high-voltage SiC power devices[J]. Science & Technology Review, 2021, 39(14): 56-62. |
[2] |
CAI Wei, SUN Dongyang, ZHOU Minghao, GUO Qingbo, GAO Hanying. Third generation wide bandgap power semiconductors and their applications[J]. Science & Technology Review, 2021, 39(14): 42-55. |
[3] |
DENG Zhidong. Review of global self-driving in 2018: A wonderful industrial ecosystem[J]. Science & Technology Review, 2019, 37(3): 30-34. |
[4] |
WEN Xuhui, NING Puqi, MENG Jinlei, ZHANG Jin, LIU Jun, KONG Liang. Power semiconductor devices used in electric vehicle drive systems[J]. Science & Technology Review, 2016, 34(6): 69-73. |
[5] |
TIE Shengnian;HOU Siyi;WANG Chang'an;WANG Tao. Research Progress of Silicon Carbide Cut Waste Recycling in New Energy Resource Silicon Industry[J]. , 2013, 31(4): 74-79. |
[6] |
TIE Shengnian;LI Xing . Research on Surface Modification of SiC Powder with Aminoorganosilanes in the Semiconductor Manufacturing[J]. , 2011, 29(19): 29-33. |
|
|
|
|