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Progress in developing high-voltage SiC power devices |
BAI Song, LI Shiyan, YANG Xiaolei, FEI Chenxi, LIU Ao, HUANG Runhua, YANG Yong |
State Key Laboratory of Wide-Bandgap Semiconductor Electronic Devices, Nanjing Electronic Devices Institute, Nanjing 210016, China |
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Abstract: The SiC power devices are replacing the silicon-based devices in more and more applications, and becoming a research focus. The SiC device technologies have matured in recent years, and the advantages in performance over the Si device are demonstrated in this paper. The development of the high-voltage SiC power devices and some of the latest progresses are discussed.
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Received: 18 May 2020
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