Collect | Home Page 
   
Science & Technology Review  2021, Vol. 39 Issue (14): 56-62    DOI: 10.3981/j.issn.1000-7857.2021.14.005
Exclusive: Innovation and development of the third generation semiconductor Current Issue | Archive | Adv Search |
Progress in developing high-voltage SiC power devices
BAI Song, LI Shiyan, YANG Xiaolei, FEI Chenxi, LIU Ao, HUANG Runhua, YANG Yong
State Key Laboratory of Wide-Bandgap Semiconductor Electronic Devices, Nanjing Electronic Devices Institute, Nanjing 210016, China

Copyright © Editorial office of Science & Technology Review
Tel: +86-10-62138113 Fax: +86-10-62138113 E-mail: jdbbjb@cast.org.cn
京ICP备14028469号-1