Progress in developing high-voltage SiC power devices

BAI Song, LI Shiyan, YANG Xiaolei, FEI Chenxi, LIU Ao, HUANG Runhua, YANG Yong

Science & Technology Review ›› 2021, Vol. 39 ›› Issue (14) : 56-62.

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Science & Technology Review ›› 2021, Vol. 39 ›› Issue (14) : 56-62. DOI: 10.3981/j.issn.1000-7857.2021.14.005
Exclusive: Innovation and development of the third generation semiconductor

Progress in developing high-voltage SiC power devices

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2021, 39(14): 56-62 https://doi.org/10.3981/j.issn.1000-7857.2021.14.005

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