Taking strained quantum wells of InGaAs/GaAs as an example, the strain effect in the quantum well structure is discussed. Based on the k·p perturbation theory, the 6×6 Luttinger-Kohn Hamiltonian which include the heavy hole band, light hole band, the split-orbit splitting band mixing effect and strain effect is given. The 6×6 Luttinger-Kohn Hamiltonian is exactly calculated by using Matlab, with the numerical simulation, the conduction band structure, the valence band structure, and the envelope function at the center on Brillouin zone are obtained. The results indicate that introducing the strain makes the crystal distort, the symmetry of the crystal structure change, and furthermore the band structure of the material change, providing an effective band cutting tool. The research work is characterized as follows: a complete system model which considers all the effects, involving the band-gap, the band offset, and the band structure, is establish. The model is also suitable to calculation the band structures of other Ⅲ-Ⅴfamily semiconductor quantum wells.