Exclusive

Interpretation of the 2014 Nobel Prize in Physics Abstract

  • SHEN Bo ,
  • YU Tongjun ,
  • GE Weikun
Expand
  • 1. School of Physics, Peking University, Beijing 100871, China;
    2. Department of Physics, Tsinghua University, Beijing 100084, China

Received date: 2014-12-09

  Revised date: 2015-01-31

  Online published: 2015-03-19

Abstract

This article explains in details about the background, content, academic significance and contribution to the social development of the invention of GaN-based blue light emission diode (LED), which was awarded the 2014 Nobel Prize in Physics. It also analyzes the development trend of the nitride wide bandgap semiconductors. Based on the story of assiduous research work of the three Nobel prize winners, and the evaluation standard of the Nobel prize committee, the article makes comments on the positive experiences from this awarding to our country, in terms of the construction way of physical science, the relationship between fundamental and applied physics, and the standard of evaluating the research achievements.

Cite this article

SHEN Bo , YU Tongjun , GE Weikun . Interpretation of the 2014 Nobel Prize in Physics Abstract[J]. Science & Technology Review, 2015 , 33(4) : 13 -16 . DOI: 10.3981/j.issn.1000-7857.2015.04.001

References

[1] Pankove J I, Miller E A, Berkeyheiser J E. GaN electroluminescentdiodes[J]. RCA Review, 1971, 32: 383.
[2] Amano H, Sawaki N, Akasaki I, et al. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer[J]. Applied Physics Letters, 1986, 48: 353.
[3] Amano H, Kito M, Hiramatsu K, et al. P-type conduction in Mg-doped GaN treated with low-energy electron-beam irradiation (LEEBI)[J]. Japanese Journal of Applied Physics, 1989, 28(12): L2112-L2114.
[4] Nakamura S, Harada Y, Sehno M. Novel metalorganic chemical vapor deposition system for GaN growth[J]. Applied Physics Letters, 1991, 58: 2021.
[5] Nakamura S, Iwasa N, Sehno M, et al. Hole compensation mechanism of p-type GaN films[J]. Japanese Journal of Applied Physics, 1992, 31 (1): 1258-1266.
[6] Nakamura S, Mukai T, Sehno M. Candela-class high-brightness InGaN/ AlGaN double-heterostructure blue-light-emmiting diodes[J]. Applied Physics Letters, 1994, 64(13): 1687-1689.
[7] Cree First to Break 300 Lumens-Per-Watt Barrier [EB/OL]. [2014-03-26]. http://www.cree.com/News-and-Events/Cree-News/Press-Releases/ 2014/March/300LPW-LED-barrier.
Outlines

/