In recent years, the third generation wide bandgap(WBG) power semiconductors, represented by the silicon carbide and the gallium nitride, have developed rapidly, and have become the focus of the R & D and the industrial applications in the power electronics industry. It is very important for the sustainable development of the industrial innovation system to seize the strategic opportunity period of the third generation WBG power semiconductor, and to realize the independent and controllable development of the semiconductor materials, devices, packaging modules and systems. Based on the analysis of the important strategic significance of the third generation WBG power semiconductor, this paper reviews the development of its materials, device R & D and industry, as well as the application achievements of the silicon carbide (SiC) and gallium nitride (GaN) devices, and the key issues in the third generation WBG semiconductor industry. Based on the analysis of the current situation and the forward-looking prediction, the future development trend and the technology route of the third generation WBG semiconductor in China are analyzed. It is suggested that under the national policy, the industry association and the industry alliance should play roles as a bridge and a link to support all links of the industry chain, such as the substrate materials, the epitaxial materials, the device design and the manufacturing technology, so as to guide all links to realize the resource sharing, the strong alliance, and the mutual pull and promotion between the upstream and the downstream, so as to form an industry chain with a reasonable layout and a complete structure.
CAI Wei
,
SUN Dongyang
,
ZHOU Minghao
,
GUO Qingbo
,
GAO Hanying
. Third generation wide bandgap power semiconductors and their applications[J]. Science & Technology Review, 2021
, 39(14)
: 42
-55
.
DOI: 10.3981/j.issn.1000-7857.2021.14.004
[1] 李亮, 沈羽, 柴晓宇, 等. 半导体材料在电子科学技术中的发展前景[J]. 中国新通信, 2019, 21(18):60-61.
[2] 闫美存. 碳化硅功率器件的关键技术及标准化研究[J]. 信息技术与标准化, 2018(4):40-43.
[3] 曹峻. 碳化硅半导体技术和市场应用综述[J]. 集成电路应用, 2018, 35(8):5-9.
[4] 赵炫, 蒋栋, 刘自程, 等. SiC功率器件在轨道交通行业中的应用[J]. 机车电传动, 2020(1):38-44.
[5] 盛况, 任娜, 徐弘毅. 碳化硅功率器件技术综述与展望[J]. 中国电机工程学报, 2020, 40(6):1741-1753.
[6] 李许军, 坚葆林. 高压SiC功率半导体器件的发展现状与挑战[J]. 集成电路应用, 2020, 37(2):30-33.
[7] 基本半导体:将SiC功率器件提携至高光之下[J]. 变频器世界, 2019(7):14-15.
[8] 第三代半导体产业发展报告(2017)[R]. 北京:第三代半导体产业技术创新联盟, 2017:16-39.
[9] 英飞凌碳化硅SiC占比充电桩市场份额超过五成[J]. 半导体信息, 2019(4):36-37.
[10] 盛况, 董泽政, 吴新科. 碳化硅功率器件封装关键技术综述及展望[J]. 中国电机工程学报, 2019, 39(19):5576-5584.
[11] Iwamuro N. Recent Progress of power semiconductor devices and their futures[C]. 2017 IEEE CPMT Symposium Japan (ICSJ), 2017:191-194.
[12] 宋维东. 碳化硅半导体材料的研究现状及发展前景[J]. 中国粉体工业, 2020(2):8-11.
[13] 牛双蛟, 李倩. 氮化镓材料的研究进展[J]. 广东化工, 2017, 44(2):84-86.
[14] 第三代半导体产业观察第三代半导体材料之氮化镓(GaN)[EB/OL]. (2020-06-30)[2020-10-20]. https://baijiahao.baidu.com/s?id=1670910224276391004&wfr=spider&for=pc.
[15] 高雅丽. 氮化镓衬底晶片实现"中国造"[N]. 中国科学报, 2018-01-29(6).
[16] Tetsu N, Ryo T, Kenji O, et al. 3.3 kV all-SiC power module for traction system use[C]//PCIM Europe 2017-International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Nurnberg:Power, Conversion, Intelligen, Motion(PCIM), 2017:51-56.
[17] 第三代半导体产业技术创新战略联盟. 2018全球第3代半导体产业发展回顾及展望[J]. 新材料产业, 2019, 5:26-35.
[18] Mitsubishi Electric Corporation. Mitsubishi electric to launch railcar traction inverter with all-SiC power module[EB/OL]. (2013-10-25)[2018-10-12]. https://www.mitsubishielectric.com/news/2013/pdf/1225.pdf.
[19] Shang F, Arribas A P, Krishnamurthy M. A comprehensive evaluation of SiC devices in traction applications[C]//2014 IEEE Transportation Electrification Conference and Expo. Piscataway, NJ:IEEE, 2014:1-5.
[20] 陈治明, 李守智. 宽禁带半导体电力电子及其应用[M]. 2版. 北京:机械工业出版社, 2018.
[21] 蔡蔚, 贡俊, 张舟云, 等. 新能源汽车电驱动总成系统技术路线图[M]//节能与新能源技术路线图2.0. 北京:机械工业出版社, 2020.
