As a wide band gap semiconductor device, the 4H-SiC power device has the advantages of high voltage, low conduction resistance and good heat dissipation due to its outstanding material features. In recent years, with the gradual commercialization of the devices, the reliability of the devices becomes a new research hotspot. This paper reviews the recent research progress of our research group on the reliability of the 4H-SiC power diodes. The degradation mechanism of the device performance is analyzed in terms of the high temperature storage and the high voltage anti bias property. According to the reliability of the avalanche, the 4H-SiC JBS diodes with the traditional FLRs and the trench FLRs terminal structure is designed and prepared. The results indicate that the trench FLRs can be used in the terminal scheme to effectively improve the capability of the device on the anti repeated avalanche.
ZHANG Yuming
,
YUAN Hao
,
TANG Xiaoyan
,
SONG Qingwen
,
HE Yanjing
,
LI Dongxun
,
BAI Zhiqiang
. Research progress on reliability of 4H-SiC power Schottky diodes[J]. Science & Technology Review, 2021
, 39(14)
: 63
-68
.
DOI: 10.3981/j.issn.1000-7857.2021.14.006
[1] Sugawara Y, Asano K, Saito R. 3.6 kV 4H-SiC JBS diodes with Low RonS[J]. Materials Science Forum, 2000(338/342):1183-1186.
[2] Banu V, Brosselard P, Jorda X, et al. Behaviour of 1.2 kV SiC JBS diodes under repetitive high power stress[J]. Microelectronics Reliability, 2008, 48(8/9):1444-1448.
[3] Zhu L, Chow T P, Jones K A, et al. Design, fabrication, and characterization of low forward drop, low leakage, 1-kV 4H-SiC JBS rectifiers[J]. IEEE Transactions on Electron Device, 2006, 53(2):363-368.
[4] Rabkowski J, Tolstoy G, Peftitsis D, et al. Low-loss high performance base-drive unit for SiC BJTs[J]. IEEE Transactions On Power Electronics, 2012, 27(5):2633-2643.
[5] Kranzer D, Reiners F, Wilhelm C, et al. System improvements of photovoltaic inverters with SiC-transistors[J]. Material Science Forum, 2010(645/648):1171-1176.
[6] Discrete SiC Schottky diodes[EB/OL].[2020-05-04]. https://www.wolfspeed.com/power/products/sic-schottky-diodes.
[7] CoolSiCTM Schottky diodes[EB/OL].[2020-05-06]. https://www.infineon.com/cms/en/product/power/diodes-thyristors/coolsic-schottky-diodes.
[8] 泰科天润[EB/OL].[2020-07-04]. http://www.globalpowertech.cn/service.
[9] Huang R H, Tao Y H, Cao P F, et al. Development of 10 kV 4H-SiC JBS diode with FGR termination[J]. Journal of Semiconductors, 2014, 35(7):074005.
[10] Ren N, Wang J, Sheng K. Design and experimental study of 4H-SiC trenched junction barrier Schottky diodes[J]. IEEE Transactions on Electron Devices, 2014, 61(7):2459-2465.
[11] Yuan H, Song Q W, Tang X Y, et al. High performance of 5.7 kV 4H-SiC JBSs with optimized non-uniform field limiting rings termination[J]. Materials Science Forum, 2016(858):986-989.
[12] Dou W T, Song Q W, Yuan H, et al. Design and fabrication of high performance 4H-SiC TJBS diodes[J]. Journal of Crystal Growth, 2020, 533:125421.
[13] Huang X, Wang G Y, Lee M C, et al. Reliability of 4HSiC SBD/JBS diodes under repetitive surge current stress[C]//Energy Conversion Congress and Exposition. Piscataway, NJ:IEEE, 2012:2245-2248.
[14] Wu J P, Ren N, Wang H Y, et al. 1.2 kV 4H-SiC merged PiN Schottky diode with improved surge current capability[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2019, 7(3):1496-1504.
[15] Xu H Y, Sun J H, Cui J J, et al. Surge capability of 1.2 kV SiC diodes with high-temperature implantation[C]//Proceedings of the 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs. Piscataway, NJ:IEEE, 2018. doi:10.1109/ECCE.2012.6342436.
[16] Banu V, Godignon P, Jorda X, et al. High temperature SiC Schottky diodes with stable operation for space application[C]//CAS 2010 Proceedings. Piscataway, NJ:IEEE, 2010:397-400.
[17] Godignon P, Jorda X, Vellvehi M, et al. SiC Schottky diodes for harsh environment space applications[J]. IEEE Transactions on Industrial Electronics, 2011, 58(7):2582-2590.
[18] Huang X, Wang G, Jiang L, et al. Ruggedness analysis of 600 V 4H-SiC JBS diodes under repetitive avalanche conditions[C]. Applied Power Electronics Conference and Exposition. Piscataway, NJ:IEEE, 2012:1688-1691.
[19] Draghici M, Rupp R, Gerlach R, et al. A new 1200 V SiC MPS diode with improved performance and ruggedness[J]. Materials Science Forum, 2015(821/823):608-611.
[20] Liu S, Yang C, Sun W, et al. Repetitive-avalanche-induced electrical parameters shift for 4H-SiC junction barrier Schottky diode[J]. IEEE Transactions on Electron Devices, 2015, 62(2):601-605.
[21] Yang S, Zhang Y M, Song Q W, et al. Impact of hightemperature storage stressing (HTSS) on degradation of high-voltage 4H-SiC junction barrier Schottky diodes[J]. IEEE Transactions on Power Electronics, 2017(99):1.
[22] Song Q W, Yuan H, Sun Q J, et al. Reverse-bias stressinduced electrical parameters instability in 4H-SiC JBS diodes terminated nonequidistance FLRs[J]. IEEE Transactions on Electron Devices, 2019, 66(9):3935-3939.
[23] Yuan H, Liu Y C, Hu Y F, et al. Characteristic and robustness of trench floating limiting rings for 4H-SiC junction barrier Schottky rectifiers[J]. IEEE Electron Device Letters, 2020, 41(7):1056-1059.
