The third-generation semiconductors, with the SiC and the GaN as the representatives, are widely used in the new infrastructure like the 5G base station and the EV charging point. The manufacturing process of the third-generation semiconductor requires high temperature, high energy and low damage, and the related equipment thus has to be modified. The requirements of the process and the related equipment for the third-generation semiconductor are presented. This paper also reviews the domestication of the third-generation semiconductor equipment and offer suggestions for the future, such as we should take the enterprise as the main body and make the collaborative innovation in production, teaching, research and application; focus on equipping the technology in common uses and cultivating the independent part supporting system; strengthen the cultivation of the innovative talents and enhance the potential of the industrial development.
WANG Zhiyue
,
GONG Xiaoliang
,
FU Binglei
. Promote the domestication of the third-generation semiconductor equipment to embrace the dawn of semiconductors and consolidate the new infrastructure[J]. Science & Technology Review, 2021
, 39(14)
: 83
-91
.
DOI: 10.3981/j.issn.1000-7857.2021.14.008
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