The third generation semiconductor is in the frontier of the global semiconductor technology research and is the focus of the new industry competition. This paper reviews the development of the third generation semiconductor, China's scientific and technological support policies for the third generation semiconductor industry, and the current risks and existing problems. The exploration and the practice of the third-generation strategic alliance for the technological innovation in the semiconductor industry are discussed, including promoting the integration of the industry-university-research innovation consortium with major national projects, promoting the construction of the national public platform and industrial innovation ecology, formulating the group standards and promoting the construction of the related testing platforms, promoting the integration and the development of large, medium and small enterprises through innovative and entrepreneurial services, and the international cooperation. In view of the current international situation and the opportunities and challenges faced by China's third-generation semiconductor industry, this paper puts forward five suggestions:Starting the national 2030 major project as soon as possible, aiming at the major needs of the country and exploring a new national system; consolidating the basic platforms such as the public R&D and services that support the industrial chain; accelerating the improvement of the industrial ecological environment; implementing the application demonstration projects and bringing into full play the leading role of the demand side in the industry; constructing the network chain of the science and technology capital, and realizing the pulling function of the national credit on the R&D chain, the industrial chain and the capital chain.

The III-nitride based ultraviolet light-emitting diodes (UV LEDs) have tunable emission wavelengths covering a range from 210nm to 400nm, making them suited to be applied in many fields, such as industrial, environmental, medical and biochemical detection fields. Rapid great technical breakthroughs have been made to improve the performance of the AlGaN UV LEDs over the past few years. However, there is still much room for the improvement of the external quantum efficiency and the wall plug efficiency of the deep-UV LEDs due to the intrinsic properties of the Al-rich AlGaN materials. This paper reviews the recent development of the AlGaN UV LEDs, as well as the key challenges to the efficiency improvement, including the epitaxy quality, the doping efficiency, the quantum structure, the light extraction and the reliability, and the effective solutions. It is estimated that by the year 2025, the single-chip light output power of the deep-UV LED will exceed the watt level, the wall plug efficiency is expected to be increased to over 20%, and the lifetime will reach a level of 10⁴ hours.

In recent years, the third generation wide bandgap(WBG) power semiconductors, represented by the silicon carbide and the gallium nitride, have developed rapidly, and have become the focus of the R & D and the industrial applications in the power electronics industry. It is very important for the sustainable development of the industrial innovation system to seize the strategic opportunity period of the third generation WBG power semiconductor, and to realize the independent and controllable development of the semiconductor materials, devices, packaging modules and systems. Based on the analysis of the important strategic significance of the third generation WBG power semiconductor, this paper reviews the development of its materials, device R & D and industry, as well as the application achievements of the silicon carbide (SiC) and gallium nitride (GaN) devices, and the key issues in the third generation WBG semiconductor industry. Based on the analysis of the current situation and the forward-looking prediction, the future development trend and the technology route of the third generation WBG semiconductor in China are analyzed. It is suggested that under the national policy, the industry association and the industry alliance should play roles as a bridge and a link to support all links of the industry chain, such as the substrate materials, the epitaxial materials, the device design and the manufacturing technology, so as to guide all links to realize the resource sharing, the strong alliance, and the mutual pull and promotion between the upstream and the downstream, so as to form an industry chain with a reasonable layout and a complete structure.

The SiC power devices are replacing the silicon-based devices in more and more applications, and becoming a research focus. The SiC device technologies have matured in recent years, and the advantages in performance over the Si device are demonstrated in this paper. The development of the high-voltage SiC power devices and some of the latest progresses are discussed.

As a wide band gap semiconductor device, the 4H-SiC power device has the advantages of high voltage, low conduction resistance and good heat dissipation due to its outstanding material features. In recent years, with the gradual commercialization of the devices, the reliability of the devices becomes a new research hotspot. This paper reviews the recent research progress of our research group on the reliability of the 4H-SiC power diodes. The degradation mechanism of the device performance is analyzed in terms of the high temperature storage and the high voltage anti bias property. According to the reliability of the avalanche, the 4H-SiC JBS diodes with the traditional FLRs and the trench FLRs terminal structure is designed and prepared. The results indicate that the trench FLRs can be used in the terminal scheme to effectively improve the capability of the device on the anti repeated avalanche.

As representatives of the third generation semiconductor of the wide band gap, the gallium nitride, the silicon carbide and diamond with high breakdown electric field, high saturated electron rate, high heat conductivity and high displacement threshold, high temperature resistance, high radiation resistance, can be applied as the radiation detector in the space detection, the high energy particle physics, and other fields, with important potential applications. The properties of several third-generation semiconductors, the main preparation methods of the radiation detectors and the testing progress for different radiations are addressed emphatically, and the development trend of third-generation semiconductors in the radiation detection is also prospected. It is proposed that the emergence of the third generation semiconductor radiation detectors will promote the research of nuclear science, space exploration, particle and high energy physics, and play an important role in promoting the national core competitiveness.

The third-generation semiconductors, with the SiC and the GaN as the representatives, are widely used in the new infrastructure like the 5G base station and the EV charging point. The manufacturing process of the third-generation semiconductor requires high temperature, high energy and low damage, and the related equipment thus has to be modified. The requirements of the process and the related equipment for the third-generation semiconductor are presented. This paper also reviews the domestication of the third-generation semiconductor equipment and offer suggestions for the future, such as we should take the enterprise as the main body and make the collaborative innovation in production, teaching, research and application; focus on equipping the technology in common uses and cultivating the independent part supporting system; strengthen the cultivation of the innovative talents and enhance the potential of the industrial development.