CAI Wei, SUN Dongyang, ZHOU Minghao, GUO Qingbo, GAO Hanying
In recent years, the third generation wide bandgap(WBG) power semiconductors, represented by the silicon carbide and the gallium nitride, have developed rapidly, and have become the focus of the R & D and the industrial applications in the power electronics industry. It is very important for the sustainable development of the industrial innovation system to seize the strategic opportunity period of the third generation WBG power semiconductor, and to realize the independent and controllable development of the semiconductor materials, devices, packaging modules and systems. Based on the analysis of the important strategic significance of the third generation WBG power semiconductor, this paper reviews the development of its materials, device R & D and industry, as well as the application achievements of the silicon carbide (SiC) and gallium nitride (GaN) devices, and the key issues in the third generation WBG semiconductor industry. Based on the analysis of the current situation and the forward-looking prediction, the future development trend and the technology route of the third generation WBG semiconductor in China are analyzed. It is suggested that under the national policy, the industry association and the industry alliance should play roles as a bridge and a link to support all links of the industry chain, such as the substrate materials, the epitaxial materials, the device design and the manufacturing technology, so as to guide all links to realize the resource sharing, the strong alliance, and the mutual pull and promotion between the upstream and the downstream, so as to form an industry chain with a reasonable layout and a complete structure.
